Performance improvement of C60 single crystal field effect transistor: influence of PFN+Br-intermediate layer
As a new generation of electronic components, organic field-effect transistors have attracted widespread attention from academia and industry since their introduction in 1986. Compared with traditional inorganic semiconductor materials, organic semiconductors have many advantages such as wide material source, simple preparation process, compatibility with flexible substrates, etc., and have wide applications in many fields. There are two different methods for mediation of airport performance tube performance: 1. Chemical modification to mediate molecular aggregation structure and interface charge trap; Second, improve the efficiency of carrier injection into the electrode, usually by using calcium, magnesium, etc. Low work function materials or composite electrodes reduce contact resistance.
A recent article by Science China Chemistry reports a new type of airport effect tube based on C60 single crystal. Through the introduction of the PFN+Br-interlayer, the contact resistance between the electrode and the semiconductor layer is greatly reduced, and the efficiency of carrier injection into the electrode is improved. Its electron mobility is as high as 5.60cm2V-S-, the threshold voltage can be as low as 4.90V, and the performance is much higher than that of the device without PFN+Br-interlayer.
Figure 1. Morphology and crystal structure of C60 ribbon crystal: (a) Optical imaging of C60 crystal;
(b) AFM topography of C60 crystal; (c) TEM image of C60 crystal; (d) SAED of C60 crystal
In this study, the ultra-small low-voltage transmission electron microscope (LVEM5) produced by Delong Company of the United States was used to characterize the single crystal ribbon structure of C60 (as shown in Fig. 1c). The host uses a Schottky field emission electron gun to provide a high-brightness and high-coherence electron beam. It can be placed directly on the desktop of the lab.
As can be seen in the output curve, IDS and VDS have good linearity and exhibit good saturation characteristics. (as shown in picture 2).
Figure 2. Characterization of FETs: C60 single crystals are not coated (ac) / coated (df) conjugated polyelectrodes;
(a, d) transfer curve; (b, e) 45 device charge mobility histogram; (c, f) output curve
The LVEM5 accelerating voltage is only 5KV, but it can achieve a resolution of 1.5 nm. The nanostructure can obtain high-quality electron micrographs and directly save the Tiff format without transcoding. No need for liquid nitrogen, no need for special operation management, easy operation and maintenance, it is an ideal choice for the laboratory.
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The Quantum Design China subsidiary participated in the “2017 National Electron Microscope Annual Conference†held in Chengdu on October 17-22. Welcome interested teachers and students to visit the booth and visit and guide. We are always looking forward to meeting you!
* references:
Enhanced performance of field-effect transistors based on C60 single crystals with conjugated polyelectrolyte. Sci China Chem. April (2017) Vol.60 No.4.
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