New method can synthesize high-quality graphene
American scientists said that they have developed a technology for artificially synthesizing high-quality graphene. The new method is not only controllable and scalable, but is expected to pave the way for the development of next-generation electronic devices. Related research will be published in the 11th issue of "Carbon" this year.
Graphene is a two-dimensional crystal composed of carbon atoms exfoliated from graphite materials. With only one layer of carbon atoms, it is by far the thinnest and hardest material. Its electrical and thermal conductivity is superior to silicon and Other traditional semiconductor materials. Scientists believe that graphene is expected to revolutionize the field of materials science. In the future, it may replace silicon as an electronic component material. It is widely used in supercomputers, flexible touch screens, environmental protection and medical equipment, photonic sensors, and organic solar cells. But for graphene to be better used in the electronics industry, it is necessary to find a controllable and effective method to obtain higher quality graphene in a larger range.
The latest synthesis technology developed by a research team led by Professor Costafah Banaji, a professor at the Department of Electrical and Computer Engineering at the University of California, Santa Barbara (UCSB), provides high-quality and homogeneous graphene. This process can not only be expanded, but also control the number of layers of graphene finally obtained-single layer or double layer, which is very important for graphene to show its strength in electronics and other technical fields.
The key to the research team's technology is their profound understanding of the significant impact of the susceptor on graphene growth kinetics. They used a low-pressure chemical vapor deposition (LPCVD) method on a pre-treated copper base and decomposed methane at a specific high temperature to create a homogeneous carbon layer (graphene).
Liu Wei, a postdoctoral researcher who participated in the study, said: "The imperfect location on the copper base will significantly affect the growth of graphene. By properly processing the copper surface and accurately selecting the growth parameters, we have achieved The quality and homogeneity are optimized while controlling the number of graphene layers. "
Researcher Li Hong said: "Graphene produced by the new method has obtained the maximum carrier mobility of graphene produced by chemical vapor deposition to date: the average value is 4000 square centimeters per volt · second, the maximum The value is 5500 square centimeters per volt-second. It is much higher than silicon. "
Banaji said: "There is no doubt that graphene is a very excellent material, and its application range is very wide, but in terms of how to obtain high-quality graphene and how to customize its properties for special purposes, we also Faced with huge challenges, but these challenges are also fertile ground for our future research. "
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